Get Advice on Live Video Call
Earn $ Cash $ with
consultations on Bissoy App

Silicon is doped with arsenic (concentration 10<sup>20</sup> atoms.m<sup>-3</sup>). At room temperature, the electron and hole mobilities in Si are 0.14 m<sup>2</sup>.v<sup>-1</sup>.s<sup>-1</sup> and 0.05 m<sup>2</sup>v<sup>-1</sup>.s<sup>-1</sup> respectively. The conductivity in (?m)<sup>-1</sup>, at room temperature for Si doped with As is

Correct Answer: 2.24

The intrinsic carrier density at room temperature in Ge is 2.37×1019/m3. If the electron and hole mobilities are 0.38 and 0.18 m2/Vs respectively. Calculate its resistivity.

Hotel Aditya has 10 single AC rooms, 5 double AC rooms and 18 non AC rooms. The fixed monthly rent of hotel is 150,000. The per day maintenance cost is Rs. 100 for double AC room, Rs. 75 for single AC room and Rs. 40 for non AC room. The per day charges are Rs. 600 for double AC room, Rs. 400 for single AC room and Rs. 250 for non AC room. In April 2003, the occupancy rate of non AC room was 50%, 70% of single AC room and 40% of double AC rooms. Find the profit/loss % for that particular month.

Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 1016 m-3. Doping by indium increases p to 4.5 X 1022 m-3. What is n in the doped silicon?

0.014*0.014=?

In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is

In a room-and-pillar stope, bench blasting is conducted using ANFO having density of 800 kg/m3. The specific gravity of rock is 2.5, hole diameter is 100 mm and spacing to burden ratio is 1.3. The charge length of each blast hole is 80% of the hole length. For a desired powder factor of 0.48 kg/tonne, the spacing and burden of the blast pattern in m respectively are

Find the velocity of an electron when its kinetic energy is equal to one electron volt (in 105m/s). Given charge of an electron e = 1.6 x 10-19 and mass of an electron m = 9.1 x 10-31.

The concentration of oxygen at the inner surface of the vessel is maintained at a level C depending on the pressure in the vessel, while the concentration at the outer surface is reduced to zero by the escape of oxygen to the surroundings. A steady state will eventually be reached when the concentration everywhere reaches a constant value. Provided D is independent of concentration there will be a single concentration gradient in the wall and the thickness of the wall is L, the flux is given by________________

An n-type semiconductor has an electron concentration of 3 × 1020 m-3. If the electron drift velocity is 100 m/s in an electric field of 200 V/m, the conductivity (in $${\Omega ^{ - 1}}$$ m-1) of this material is

If the sulfur contains Arsenic which attacks the Vanadium or Platinum catalyst during contact process. Using which of the following can the Arsenic be removed.