Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 1016 m-3. Doping by indium increases p to 4.5 X 1022 m-3. What is n in the doped silicon?

Correct Answer: 5 X 109 m-3
Here, ni = 1.5 X 1016 m-3, p = 4.5 X 1022 m-3 We know, np = ni2 n = ni2/p = 5 X 109 m-3.