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The intrinsic carrier density at room temperature in Ge is 2.37×1019/m3. If the electron and hole mobilities are 0.38 and 0.18 m2/Vs respectively. Calculate its resistivity.

Correct Answer: 0.709ohm m
Conductivity = nie(μe+μh) Conductivity = 2.12352/ohm m Resistivity = 1/Conductivity Resistivity = 0.4709ohm m.

Silicon is doped with arsenic (concentration 1020 atoms.m-3). At room temperature, the electron and hole mobilities in Si are 0.14 m2.v-1.s-1 and 0.05 m2v-1.s-1 respectively. The conductivity in (?m)-1, at room temperature for Si doped with As is

Hotel Aditya has 10 single AC rooms, 5 double AC rooms and 18 non AC rooms. The fixed monthly rent of hotel is 150,000. The per day maintenance cost is Rs. 100 for double AC room, Rs. 75 for single AC room and Rs. 40 for non AC room. The per day charges are Rs. 600 for double AC room, Rs. 400 for single AC room and Rs. 250 for non AC room. In April 2003, the occupancy rate of non AC room was 50%, 70% of single AC room and 40% of double AC rooms. Find the profit/loss % for that particular month.

The effective density of states at the conduction band edge of Ge is 1.04 × 1019 cm-3 at room temperature (300 K). Ge has an optical band gap of 0.66 eV. The intrinsic carrier concentration (in cm-3) in Ge at room temperature (300 K) is approximately

A GSM cellular telephone standard requires a minimum of 9 dB rejection of interfering signal levels of -23 dBm at 3 MHz from the carrier, -33 dBm at 1.6 MHz from the carrier, and -43 dBm at 0.6 MHz from the carrier, for a carrier level of -99 dBm. Determine the required local oscillator phase noise at 3 MHz carrier frequency offset.

In a room-and-pillar stope, bench blasting is conducted using ANFO having density of 800 kg/m3. The specific gravity of rock is 2.5, hole diameter is 100 mm and spacing to burden ratio is 1.3. The charge length of each blast hole is 80% of the hole length. For a desired powder factor of 0.48 kg/tonne, the spacing and burden of the blast pattern in m respectively are

দেওয়া আছে (i) অর্ধপরিবাহীর Majority carrier election, (ii) p-type অর্ধপরিাবাহীর Majority carrier hole এবং (iii) pure অর্ধপিরবাহীর Majority carrier hole । নিচের কোনটি সঠিক?

A planar LED is fabricated from GaAs is having a optical power emitted is 0.018% of optical power generated internally which is 0.018% of optical power generated internally which is 0.6 P. Determine external power efficiency.

Find the velocity of an electron when its kinetic energy is equal to one electron volt (in 105m/s). Given charge of an electron e = 1.6 x 10-19 and mass of an electron m = 9.1 x 10-31.

An intrinsic semiconductor with mass of a hole mh, and mass of an electron me is at a finite temperature T. If the top of the valence band energy is Ev and the bottom of the conduction band energy is Ec, the Fermi energy of the semiconductor is

Variation of electrical resistivity $$\rho $$ with temperature T of three solids is sketched (on different scales) in the figure, as curves P, Q and R.
Which one of the following statements describes the variations most appropriately?
Solid State Physics mcq question image