When a p-n junction is reverse-biased, the current becomes almost constant at 25 μA.

(a) : Electric field is zero in the middle of the depletion layer of a reverse-biased p-n junction.

(c) :- When p-n junction diode is forward biased, both the depletion region and barrier height are reduced.

(a) if the junction is forward-biased

(d) ''base'' and base.

(a) the base - emitter junction is forward biased  (d) the base - collector junction is reverse-biased.

If the reverse bias across a p-n junction is decreased, the depletion region of p-n junction decreases.

(4) Affects the overall V – I characteristics of p-n junction

(i) When forward biased, the width of depletion layer decreases.  (ii) When reverse biased, the width of depletion layer increases.

Consider the case of n-type semiconductor. The majority carrier (electron) density is larger than the minority hole density, i.e., n >> p.  On illumination, the no. of both types of carriers...

Potential barrier ‘d’ = 250 meV Initial KE of hole = 300 meV We know: KE of the hole decreases when the junction is forward biased and increases when reverse blased in...