In the middle of the depletion layer of a reverse-biased p-n junction, the.

(c) :- When p-n junction diode is forward biased, both the depletion region and barrier height are reduced.

(a) if the junction is forward-biased

(a) the base - emitter junction is forward biased  (d) the base - collector junction is reverse-biased.

If the reverse bias across a p-n junction is decreased, the depletion region of p-n junction decreases.

(4) Affects the overall V – I characteristics of p-n junction

Formation of depletion layer:  At the junction there is diffusion of charge carriers due to thermal agitation; so that some of electrons of n-region diffuse to p-region while some of holes...

(i) When forward biased, the width of depletion layer decreases.  (ii) When reverse biased, the width of depletion layer increases.

Depletion region ‘d’ = 400 nm = 4 x10–7 m Electric field E = 5 x105 V/m a) Potential barrier V = E x d = 0.2 V b) Kinetic energy required =...

Potential barrier ‘d’ = 250 meV Initial KE of hole = 300 meV We know: KE of the hole decreases when the junction is forward biased and increases when reverse blased in...

i1 = 25 μA, V = 200 mV, i2 = 75 μA a) When in unbiased condition drift current = diffusion current  Diffusion current = 25 μA. b) On reverse biasing the diffusion current becomes ‘O’. c)...