Diffusion current in a p-n junction is greater than the drift current in magnitude (a) if the junction is forward-biased

(a) : Electric field is zero in the middle of the depletion layer of a reverse-biased p-n junction.

(c) :- When p-n junction diode is forward biased, both the depletion region and barrier height are reduced.

(a) from the n-side to the p-side

(b) from the p-side to the n-side

(a) the base - emitter junction is forward biased  (d) the base - collector junction is reverse-biased.

(i) When forward biased, the width of depletion layer decreases.  (ii) When reverse biased, the width of depletion layer increases.

Consider the case of n-type semiconductor. The majority carrier (electron) density is larger than the minority hole density, i.e., n >> p.  On illumination, the no. of both types of carriers...

Potential barrier ‘d’ = 250 meV Initial KE of hole = 300 meV We know: KE of the hole decreases when the junction is forward biased and increases when reverse blased in...

i1 = 25 μA, V = 200 mV, i2 = 75 μA a) When in unbiased condition drift current = diffusion current  Diffusion current = 25 μA. b) On reverse biasing the diffusion current becomes ‘O’. c)...

(d) A = x2 – y2 = (x + y)(x – y) = 10 (x – y) B = 20 Now, it is not possible to compare A and B, as...