In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.


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The correct statement is (c).
The diffusion of charge carriers across a junction takes place from the region of higher concentration to the region of lower concentration. In this case, the p-region has greater concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes diffuse from the p-region to the n-region.

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The answer is (C) Hole concentration in p-region is more as compared to n-region.

In an unbiased p-n junction, hole concentration in p-region is more as compared to n-region.

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