Determine the number density of donor atoms which have to be added to an intrinsic germanium to produce an `n`-type semiconductor of conductity `0.06Sm^(-1)`. Given the mobility of electrons `=0.39m^(2)V^(-1)s^(-1)`. Neglect the contribution of holes to the conductivity.
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A body of density d is counterpoised by Mg of weights of density `d_1` in air of density d. Then the true mass of the body is
Correct Answer - D Let `M_(0)` = mass of body in vacuum. Apparent weight of the body in air = Apparent weight of standard weights in air implies Actual weight -...
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Determine the conductivity of pure germanium at `27^(@)C`. The concentration of the carriers at this temperature is `2.2 xx 10^(19)m^(-3)`. The mobili
Correct Answer - `1.87 Omega^(-1)m^(-1)`
2 Answers 1 views
A doped semiconductor has impurity levels `30meV` below the conduction band. Is the material `n`-type or `p`- type? Find the maximum wavelength of igh
Correct Answer - `4.125xx10^(-5)m`
2 Answers 4 views
The number density of electrons and holes in intrinsic silicon at a given temperature is `4.94xx10^(10)cm^(-3)`. Calculate the resistivity and conduct
Correct Answer - `9xx10^(4)Omegacm, 11.1xx10^(-6)Scm^(-1)`
2 Answers 1 views
Germanium is doped one part million with indium at room temperature. Calculate the conductivity of doped germanium. Given: concentration of Ge atoms `
Correct Answer - `1.34xx10^(3)ohm^(-1)m^(-1)`
2 Answers 2 views
Determine the conductivity and resistivity of pure germanium at `300K` assuming that at this temperature the concentration of germanium is `2.5xx10^(1
Correct Answer - `2.12Sm^(-1),0.472Omegam`
2 Answers 2 views
The resistivity of pure germanium at a particular temperature is `0.52Omegam`. If the material is doped with `10^(20)` atoms `m^(-3)` of a trivalent i
Correct Answer - `0.195Omegam`
2 Answers 8 views
A sample of germanium is doped to the extent of `10^(14)` donor atoms per `cm^(3)` and `7xx10^(13)` acceptor atoms per `cm^(3)`. The resistivity of pu
Correct Answer - `52.3mAcm^(-2)`
2 Answers 5 views
Which element would you use as an impurity to make germanium an n-type semiconductor?
Germanium can be made an n-type semiconductor by doping it with pentavalent impurity, like phosphorus (P), arsenic (As) or antimony (Sb).
2 Answers 1 views
Why is the conductivity of a n-type semiconductor greater than that of p-type semiconductor
1. In a p-type semiconductor, holes are majority charge carriers. 2. When a p-type semiconductor is connected to terminals of a battery, holes, which are not actual charges, behave like a...
2 Answers 2 views