- 1 and 2 only
- 1 and 3 only
- 1, 2 and 3
- 2 and 3 only
Option 1 : 1 and 2 only
The relationship between the drain current and gate-to-source voltage defines as:
ID=IDSS(1-(VGS / Vp)2
where,
ID=drain current, IDSS=maximum saturation current, VGS=gate to source voltage, Vp=pinch of voltage
drain current, and gate-to-source voltage in JFET are nonlinearly related(option 1 is correct)
In the JFET transistor at VGS=Vp drain current is zero which is the minimum drain current . (option 2 is correct)
current control devices are the device in which input current control output current or voltage, in BJT transistor base current control collector and emitter current and BJT are known as a current control device.(option 3 incorrect)
The FET transistors are voltage-controlled devices whereas the BJT transistors are current-controlled devices. The FET transistors have three terminal drains, source, and gate which are equivalent to the collector, emitter, and base terminals in BJT transistors.