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How does a FET behave when the v-I characteristics are to the left of pinch off for an n channel FET?

Correct Answer: Voltage controlled resistor
When the voltage Vgs is less than pinch off voltage, there will be no current flow, resulting in Ohmic region, on controlling the Vgs and VDs values, the FET acts as Voltage controlled resistor.

If a + b + c + d = 4, then find the value of $$\frac{1}{{\left( {1 - a} \right)\left( {1 - b} \right)\left( {1 - c} \right)}}$$     + $$\frac{1}{{\left( {1 - b} \right)\left( {1 - c} \right)\left( {1 - d} \right)}}$$     + $$\frac{1}{{\left( {1 - c} \right)\left( {1 - d} \right)\left( {1 - a} \right)}}$$     + $$\frac{1}{{\left( {1 - d} \right)\left( {1 - a} \right)\left( {1 - b} \right)}}$$     is?

If a + b + c + d = 4, then the value of $$\frac{1}{{\left( {1 - a} \right)\left( {1 - b} \right)\left( {1 - c} \right)}}$$     + $$\frac{1}{{\left( {1 - b} \right)\left( {1 - c} \right)\left( {1 - d} \right)}}$$     + $$\frac{1}{{\left( {1 - c} \right)\left( {1 - d} \right)\left( {1 - a} \right)}}$$     + $$\frac{1}{{\left( {1 - d} \right)\left( {1 - a} \right)\left( {1 - b} \right)}}$$     is?

When an N-channel JFET reaches pinch-off, the increase in the drain to source voltage results in shifting of the pinch-off position towards the ___________

A n-channel silicon (dielectric constant = 12) FET with a channel width a = 2 × 106 m is doped with 1021 electron/m3. The pinch-off voltage is

The Hamiltonian of a particle is given by $$H = \frac{{{p^2}}}{{2m}} + V\left( {\left| {\overrightarrow {\bf{r}} } \right|} \right) + \phi \left( { + \left| {\overrightarrow {\bf{r}} } \right|} \right)\overrightarrow {\bf{L}} .\overrightarrow {\bf{S}} ,$$        where $$\overrightarrow {\bf{S}} $$ is the spin, $$V\left( {\left| {\overrightarrow {\bf{r}} } \right|} \right)$$  and $$\phi \left( {\left| {\overrightarrow {\bf{r}} } \right|} \right)$$  are potential functions and $$\overrightarrow {\bf{L}} \left( { = \overrightarrow {\bf{r}} \times \overrightarrow {\bf{p}} } \right)$$   is the angular momentum. The Hamiltonian does not commute with

A p-channel Ge JFET has max-half channel width 5µm and channel conductivity of 2/Ωcm, if Er = 2000cm2/Vsec, What is the value of pinch off voltage?

The value of the expression $$\frac{{{{\left( {a - b} \right)}^2}}}{{\left( {b - c} \right)\left( {c - a} \right)}} + $$   $$\frac{{{{\left( {b - c} \right)}^2}}}{{\left( {a - b} \right)\left( {c - a} \right)}} + $$    $$\frac{{{{\left( {c - a} \right)}^2}}}{{\left( {a - b} \right)\left( {b - c} \right)}}$$   = ?

$$\frac{{{{\left( {4.53 - 3.07} \right)}^2}}}{{\left( {3.07 - 2.15} \right)\left( {2.15 - 4.53} \right)}} + \, $$     $$\frac{{{{\left( {3.07 - 2.15} \right)}^2}}}{{\left( {2.15 - 4.53} \right)\left( {4.53 - 3.07} \right)}} + \,\, $$     $$\frac{{{{\left( {2.15 - 4.53} \right)}^2}}}{{\left( {4.53 - 3.07} \right)\left( {3.07 - 2.15} \right)}}$$     is simplified to :

The input to a channel is a bandpass signal. It is obtained by linearly modulating a sinusoidal carrier with a single-tone signal. The output of the channel due to this input is given by
$$y\left( t \right) = \left( {{1 \over {100}}} \right)\cos \left( {100t - {{10}^{ - 6}}} \right)\cos \left( {{{10}^6}t - 1.56} \right)$$
The group delay (tg) and the phase delay (tp) in seconds, of the channel are

The quark content of $$\sum {^ + } ,\,{K^ - },\,{\pi ^ - }$$   and p is indicated: $$\left| {\sum {^ + } } \right\rangle = \left| {uus} \right\rangle ;\,\left| {{K^ + }} \right\rangle = \left| {s\overline u } \right\rangle ;\,\left| \pi \right\rangle = \left| d \right\rangle ;\,\left| p \right\rangle = \left| {uud} \right\rangle $$
In the process, $${\pi ^ - } + p \to {K^ - } + \sum {^ + } ,$$     considering strong interactions only, which of the following statements is true?