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If CT is the transition capacitance, which of the following are true? 1) in forward bias, CT dominates 2) in reverse bias, CT dominates 3) in forward bias, diffusion capacitance dominates 4) in reverse bias, diffusion capacitance dominates

Correct Answer: 2 and 3
In reverse bias condition, depletion region increases and acts as an insulator or dielectric medium. So, the transition capacitance increases. In forward bias condition, due to stored charge of minority carriers, diffusion capacitance increases.

Capacitance per unit area at no reverse bias is 2 pF/cm2. For a step graded diode of area 5cm2, what is net capacitance at 99 V reverse bias voltage?

Consider the following statements regarding the importance of diffusion and choose the correct answer:
1. The exchange of gases takes place by the principle of dependent diffusion
2. The process of diffusion is involved in transpiration of water vapours
3. The ions are absorbed by the simple diffusion during passive salt uptake
4. Diffusion is an effective means of transport of substances over a very short distance and helps in the translocation of food materials

Which of the following are true? 1) In reverse bias, the diode undergoes stages of storage and transition times 2) Minority charge carriers accumulation makes the diode as a short circuit 3) Storage time is the sum of recovery and transition times

The output of the following Python code is similar to the alphabet . . . . . . . .
import turtlet=turtle.Pen()t1=turtle.Pen()t2=turtle.Pen()t.forward(100)t1.forward(100)t2.forward(100)t1.left(90)t1.forward(75)t2.right(90)t2.forward(75)

Calculate the forward bias current of a Si diode when forward bias voltage of 0.4V is applied, the reverse saturation current is 1.17×10-9A and the thermal voltage is 25.2mV.

For an abrupt PN junction diode, small signal capacitance is 1nF/cm2 at zero bias condition.If the built in voltage, Vbi is 1V, the capacitance at reverse bias of 99V is?

From an alloy, two specimens are machined and tested separately under tension and compression. The engineering stress-strain curves as well as the true stress-true strain curves for tension and compression are plotted in the same diagram. Identify the correct statements:
P. The engineering stress-strain curves in tension and compression are identical.
Q. The true stress-true strain curve in compression is lower than the true stresstrue strain curve in tension due to Bauschinger effect.
R. The true stress-true strain curve in tension is above the corresponding engineering stress-strain, curve.
S. The true stress-true strain curve in tension and compression are identical.

As reverse bias voltage increases transition capacitance __________

If the last four letters of the word 'CONCENTRATION' are written in reverse order followed by next two in the reverse order and next three in the reverse order and then followed by the first four in the reverse order, counting from the end, which letter would be eighth in the new arrangement ?

Diffusion capacitance is larger than transition capacitance.