Which of the following expressions represent the Fermi probability function? /KT) b) fF(E)=exp(-/KT) c) fF(E)=exp(/KT) d) fF(E)=exp(-/KT)

Arrange the following steps in sequence in order to calculate the probability of an event through Naïve Bayes classifier. I. Find the likelihood probability with each attribute for each class. II. Calculate the prior probability for given class labels. III. Put these values in Bayes formula and calculate posterior probability. IV. See which class has a higher probability, given the input belongs to the higher probability class.

A

I → II → III → IV

B

II → I → III → IV

C

III → II → I → IV

D

II → III → I → IV

The following are the two statements relating to the theory of probability. Indicate the statements being correct or incorrect.
Statement I The probability of the joint occurrence of independent events A and B is equal to the probability of event A multiplied by the probability of event B or vice-versa.
Statement II The probability of the joint occurrence of independent event A and dependent event B is equal to the probability of event A multiplied by the conditionalprobability of event B when event A has occurredor vice-versa.

A

Both statements are correct

B

Both statements are incorrect

C

Statement I is correct while Statement II is incorrect

D

Statement I is incorrect while Statement II is correct

A probability distribution with right skew is shown in the figure.

The correct statement for the probability distribution is

A

Mean is equal to mode

B

Mean is greater than median but less than mode

C

Mean is greater than median and mode

D

Mode is greater than median

Which of the following equations represent the correct expression for the band diagram of the p-n junction? (E1=difference between the fermi level of material and conduction band of n material and E2=difference between the conduction band of n material and fermi level of n material)

A

Ecn – E f = (1/2)*EG – E1

B

Ecn – E f = (1/2)*EG – E2

C

Ef – Ecp = (1/2)*EG – E1

D

Ecn – Ef = (1/2)*EG + E1

The graph of a function f(x) is shown in the figure.

For f(x) to be valid probability density function, the value of h is

A

$$\frac{1}{3}$$

B

$$\frac{2}{3}$$

C

1

D

3

Consider the Fermi-Dirac distribution function f(E) at room temperature (300 K), where E refers tb energy. If E_F is the Fermi energy, which of the following is true?

A

f(E) is a step function

B

f(E<sub>F</sub>) has a value of $$\frac{1}{2}$$

C

States with E F are filled completely

D

f(E) is large and tends to infinity as E decreases much below E<sub>F</sub>

An unbalanced dice (with 6 faces, numbered from 1 to 6) is thrown. The probability that the face value is odd is 90% of the probability that the face value is even. The probability of getting any even numbered face is the same.
If the probability that the face is even given that it is greater than 3 is 0.75, which one of the following options is closest to the probability that the face value exceeds 3?

A

0.453

B

0.468

C

0.485

D

0.492

Which of the following statements are true?
1. The classical approach to probability theory requires that the total number of possible outcomes be known or calculated and that each of the outcomes be equally likely.
2. A marginal probability is also known as unconditional probability.
3. For three independent events, the joint probability of the three events, P (ABC) = P (A) × P (B/A) × P (C/AB)
4. Two events are mutually exclusive, exhaustive and equally likely, the probability of either event A or B or both occurring P(A or B) = P(A) + P(B)

A

Both 1 and 3

B

Both 3 and 4

C

1, 2 and 4

D

All of the above

Which of the following expressions represents the correct distribution of the electrons in the conduction band? (gc(E)=density of quantum states, fF(E)=Fermi dirac probability

A

n(E)=gc(E)*fF(E)

B

n(E)=gc(-E)*fF(E)

C

n(E)=gc(E)*fF(-E)

D

n(E)= gc(-E)*fF(-E)

If excess charge carriers are created in the semiconductor then the new Fermi level is known as Quasi-Fermi level. Is it true?

A

True

B

False